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Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
For power amplification
10.00.3 1.50.1
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
s Features
q q q
1.5max.
1.1max.
High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.5min.
2.0
0.80.1
0.5max.
2.540.3 5.080.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
(TC=25C)
Ratings 500 400 5 10 6 40 1.3 150 -55 to +150 Unit V
10.00.3 8.50.2 6.00.3
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
V V A
1.5-0.4
2.0
3.0-0.2
A W
4.40.5
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.080.5
C C
1 2 3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency
(TC=25C)
Symbol ICBO VCEO(sus) VEBO hFE VCE(sat) VBE(sat) fT Conditions VCB = 350V, IE = 0 IC = 2A, L = 10mH IE = 0.1A, IC = 0 VCE = 2V, IC = 2A IC = 3A, IB = 0.06A IC = 3A, IB = 0.06A VCE = 10V, IC = 1A, f = 1MHz 15 400 5 500 1.5 2.5 V V MHz min typ max 100 Unit A V V
Internal Connection
B
C
E
4.40.5
14.70.5
+0.4
+0
1
Power Transistors
PC -- Ta
80 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=1.3W) TC=25C IB=8mA
2SD1611
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=50 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C -25C 25C
VCE(sat) -- IC
Collector power dissipation PC (W)
70 60 50 40 30 20 10 0 0 20 40 (1)
Collector current IC (A)
4
3
4.0mA 3.5mA 3.0mA 2.5mA 2.0mA
2
1 1.5mA (2) (3) 0 60 80 100 120 140 160 0 1 2 3 4 5 6
0.1
0.3
1
3
10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
100 105
hFE -- IC
104
Cob -- VCB
Collector output capacitance Cob (pF)
VCE=2V IE=0 f=1MHz TC=25C 103
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=50 30 10 3 1 25C 0.3 0.1 0.03 0.01 0.01 0.03
Forward current transfer ratio hFE
104
TC=-25C 100C
103
102
TC=100C 102 25C -25C
10
0.1
0.3
1
3
10
10 0.01 0.03
0.1
0.3
1
3
10
1 0.1
0.3
1
3
10
30
100
Collector current IC (A)
Collector current IC (A)
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100 30 103 Non repetitive pulse TC=25C ICP IC 300ms t=10s 1ms
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
10 3 1 0.3 0.1 0.03 0.01 1
1
10-1
3
10
30
100
300
1000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2

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